STPS4S200UF STMicroelectronics

STPS4S200 Datasheet 4 A - 200 V power Schottky rectifier Features Negligible switching losses High junction temperature capability Very small conduction losses Low leakage current T = -40 C minimum operating j ECOPACK2 component Applications Inverter Lighting Battery charger Telecom power Home appliance Description Single chip Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in SMB Flat Notch, SMB Flat, SMC and DPAK, the STPS4S200 is ideal for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. Product status STPS4S200 Product summary Symbol Value I F(AV) 4 A V 200 V RRM T 175 C j(max.) V 0.64 V F(typ.) DS10646 - Rev 5 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STPS4S200 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current 10 A F(RMS) SMB Flat Notch, SMC, SMB T = 125 C L Average forward current, = 0.5, square Flat I F(AV) 4 A wave DPAK T = 160C c I Surge non repetitive forward current t = 10 ms sinusoidal 130 A FSM p T stg Storage temperature range -65 to +175 C (1) T Operating junction temperature range -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit R Junction to lead (SMB Flat Notch, SMC, SMB Flat) 15 th(j-l) C/W R Junction to case DPAK 3.2 th(j-c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5 A j (1) V = V I Reverse leakage current R R RRM T = 125 C - 0.70 2.50 mA j T = 25 C - 0.87 j (2) V Forward voltage drop I = 4 A V F F T = 125 C - 0.64 0.71 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.63 x I + 0.020 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS10646 - Rev 5 page 2/16