STPS5H100H STMicroelectronics

STPS5H100 High voltage power Schottky rectifier Datasheet - production data A K Description K This high voltage Schottky barrier rectifier is packaged in DPAK and IPAK and designed for high frequency compact switched mode power supply such as adapt ers and on board DC-DC NC converters. K A Table 1: Device summary IPAK Symbol Value K K IF(AV) 5 A VRRM 100 V NC NC T (max.) 175 C j A A DPAK VF(typ.) 0.57 V Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche specification ECOPACK compliant component for IPAK and DPAK on demand May 2017 DocID5388 Rev 13 1/10 www.st.com This is information on a product in full production. Characteristics STPS5H100 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I RMS forward voltage 10 A F(RMS) Average forward current, I TC = 165 C 5 A F(AV) = 0.5, square wave I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 515 W T Storage temperature range -65 to +175 C stg (1) Tj Maximum operating junction temperature 175 C Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case 2.5 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 3.5 A (1) I Reverse leakage current V = V R R RRM T = 125 C - 1.3 4.5 mA j Tj = 25 C - 0.73 I = 5 A F T = 125 C - 0.57 0.61 j (2) VF Forward voltage drop V Tj = 25 C - 0.85 I = 10 A F T = 125 C - 0.66 0.71 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.51 x I + 0.02 x I F(AV) F (RMS) 2/10 DocID5388 Rev 13