STPS40SM100C
Power Schottky rectifier
Features
A(1)
High current capability K(2)
Avalanche rated A(3)
Low forward voltage drop current
K
High frequency operation
A
A
Description
A
K
A
K
This Schottky rectifier is suited for high frequency
switch mode power supply. 2
TO-220AB I PAK
2 2
STPS40SM100CT STPS40SM100CR
Packaged in TO-220AB, D PAK and I PAK, this
device is intended to be used in notebook, game
K
station and desktop adaptors, providing in these
applications a good efficiency at both low and
A
high load.
A
Table 1. Device summary
2
D PAK
I 2 x 20 A
F(AV)
STPS40SM100CG-TR
V 100 V
RRM
T (max) 150 C
j
(a)
Figure 1. Electrical characteristics
V (typ) 0.435 V
F
I
VForwar
I
2 x IO X
I
F
I
O X
V
RRM
V V
AR R
V
I
R
V V V V
To F(I ) F F(2xI )
o oRevers
IAR
a. V and I must respect the reverse safe
ARM ARM
operating area defined in Figure 11. V and I are
AR AR
pulse measurements (t < 1 s). V , I , V and V ,
p R R RRM F
are static characteristics
April 2010 Doc ID 15525 Rev 2 1/9
www.st.com 9Characteristics STPS40SM100C
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V Repetitive peak reverse voltage 100 V
RRM
I Forward current rms 60 A
F(RMS)
T = 130 C Per diode 20
c
I Average forward current = 0.5 A
F(AV)
T = 125 C Per device 40
c
I Surge non repetitive forward current t = 10 ms sinusoidal 530 A
FSM p
(1)
P Repetitive peak avalanche power t = 1 s T = 25 C 18000 W
ARM p j
t < 1 s T < 150 C
(2) p j
V Maximum repetitive peak avalanche voltage 120 V
ARM
I < 45 A
AR
t < 1 s T < 150 C
(2) p j
V Maximum single pulse peak avalanche voltage 120 V
ASM
I < 45 A
AR
T Storage temperature range -65 to + 175 C
stg
(3)
T Maximum operating junction temperature 150 C
j
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 11.
dPtot 1
--------------- --------------------------
3. < condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth()j a
Table 3. Thermal resistance
Symbol Parameter Value Unit
Per diode 1.3
R Junction to case
th(j-c)
Total 0.7
C/W
R Coupling 0.1
th(c)
Table 4. Static electrical characteristics (per diode, at 25 C unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
T = 25 C 7A
j
V = 70 V
R
T = 125 C 7 mA
j
(1)
I Reverse leakage current
R
T = 25 C 13 45 A
j
V = 100 V
R
T = 125 C 13 45 mA
j
T = 25 C 520
j
I = 5 A
F
T = 125 C 435
j
T = 25 C 620 700
j
(2)
V Forward voltage drop I = 10A mV
F F
T = 125 C 520 580
j
T = 25 C 740 810
j
I = 20 A
F
T = 125 C 605 665
j
1. Pulse test: t = 5 ms, < 2%
p
2. Pulse test: t = 380 s, < 2%
p
To evaluate the conduction losses use the following equation:
2
P = 0.580 x I + 0.0043 x I
F(AV) F (RMS)
2/9 Doc ID 15525 Rev 2