STPS40SM120CT STMicroelectronics

STPS40SM120C Datasheet 120 V power Schottky rectifier Features A1 K High current capability A2 Avalanche rated Low forward voltage drop current High frequency operation ECOPACK 2 compliant A2 K A2 A1 K A1 Applications IPAK TO-220AB Switching diode SMPS DC/DC converter LED lighting Notebook adapter Description This Schottky rectifier is suited for high frequency switch mode power supply. The voltage drop versus leakage current trade-off is in keeping with medium power hi-density adapter design. 2 Packed in TO-220AB and I PAK, the STPS40SM120C is optimized for use in notebook, game station and desktop adaptors, providing in these applications a good Product status link efficiency at both low and high load. STPS40SM120C Product summary Symbol Value I 2 x 20 A F(AV) V 120 V RRM T (max.) 150 C j V (typ.) 0.63 V F DS8940 - Rev 4 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS40SM120C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) T = 125 C Per diode 20 C I Average forward current, = 0.5 A F(AV) T = 115 C Per device 40 C I Surge non repetitive forward current t = 10 ms sinusoidal 210 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 1150 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 150 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Value Unit Per diode 1.35 R Junction to case th(j-c) Total 0.93 C/W R Coupling 0.50 th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 55 275 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 20 50 mA j T = 125 C I = 5 A - 0.46 0.51 j F T = 125 C I = 10 A - 0.55 0.60 j F (2) V Forward voltage drop V F T = 25 C - 0.83 j I = 20 A F T = 125 C - 0.63 0.69 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.52 x I + 0.0085 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS8940 - Rev 4 page 2/11