STPS30SM120S Power Schottky rectifier Datasheet - production data Description This Schottky diode is suited for high frequency switch mode power supply . Packaged in TO-220AB narrow leads, TO-220AB, 2 TO-220FPAB and I PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good . efficiency at both low and high load. % 2 )3 7 2 % 7 Table 1. Device summary . Symbol Value I 30 A F(AV) V 120 V . RRM 2 % 7 . ,3 . QDUURZ OHDGV T 150 C j V (typ) 0.47 V F (a) Figure 1. Electrical characteristics Features I V High current capabilityForwar I 2 x I Avalanche rated O X Low forward voltage drop I F High frequency operation I O X V RRM V V R AR Insulated package TO220FP-AB: V Insulated voltage: 2000 V sine I R RMS V V V V F(I ) F F(2xI ) ECOPACK 2 compliant component on To o o TO-220AB and TO-220FPAB.Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 9. V and I are AR AR pulse measurements (t < 10 s). V , I , V and p R R RRM V , are static characteristics F November 2014 DocID022919 Rev 2 1/14 This is information on a product in full production. www.st.comCharacteristics STPS30SM120S 1 Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at T = 25 C, amb unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 50 A F(RMS) I Average forward current 30 A F(AV) I Surge non repetitive forward current t = 10 ms sine-wave 240 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 1200 W ARM j p (2) V Maximum repetitive peak avalanche voltage t < 10 s, T < 125 C, I < 8 A 150 V ARM p j AR (2) V Maximum single-pulse peak avalanche voltage t < 10 s, T < 125 C, I < 8 A 150 V ASM p j AR T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. See Figure 9 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit TO-220AB and TO-220AB narrow leads 1.35 Junction to case C/W R th(j-c) TO-220FPAB 4 Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 55 275 A j (1) Reverse leakage current V = V I R R RRM T = 125 C - 20 50 mA j T = 125 C I = 5 A - 0.47 0.52 j F I = 10 A T = 125 C - 0.55 0.60 F j T = 25 C -0.79 j (2) V Forward voltage drop V I = 15 A F F T = 125 C - 0.60 0.65 j T = 25 C -0.95 j I = 30 A F T = 125 C - 0.68 0.76 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.56 x I + 0.0067 x I F(AV) F (RMS) 2/14 DocID022919 Rev 2