STPS30H100DJF-TR STMicroelectronics

STPS30H100DJF Power Schottky rectifier Datasheet - production data A Description A Power Schottky rectifier suited for switch mode K A power supply and high frequency DC to DC converters. A Housed in a PowerFLAT package, this device K K is intended to be used in adaptors requiring good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints. A A Table 1: Device summary PowerFLAT 5x6 Symbol Value IF(AV) 30 A V 100 V RRM Features VF (typ.) 0.56 V Low forward voltage drop T 150 C j Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance TM: PowerFLAT is a trademark of High specified avalanche capability STMicroelectronics High integration Thin package: 1 mm ECOPACK 2 compliant component June 2017 DocID023024 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics STPS30H100DJF 1 Characteristics Table 2: Absolute ratings (limiting values, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 45 A F(RMS) Average forward current I T = 100 C 30 A F(AV) C = 0.5, square wave I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 265 W Maximum repetitive peak avalanche t < 1 s, T < 150 C, p j VARM 120 V voltage I < 9.3A AR Tstg Storage temperature range -65 to +175 C (1) T Operating junction temperature range 150 j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Value Unit R Junction to case 2 C/W th(j-c) Table 4: Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 6 A j (1) IR Reverse leakage current VR = VRRM Tj = 125 C - 2.5 6.5 mA T = 25 C - 0.76 j IF = 15 A Tj = 125 C - 0.56 0.62 (1) V Forward voltage drop V F T = 25 C - 0.84 j IF = 30 A Tj = 125 C - 0.63 0.71 Notes: (1) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.60 x I + 0.00367 x I F(AV) F (RMS) 2/10 DocID023024 Rev 2