STPS30L120CFP STMicroelectronics

STPS30L120C Datasheet 120 V power Schottky rectifier A1 Features K A2 High junction temperature capability Avalanche capability specified K Low forward voltage drop current High frequency operation A2 A2 K Insulated package: TO-220FPAB K A1 A1 Insulating voltage = 1500 V TO-220AB RMS TO-220FPAB ECOPACK 2 compliant K Applications A2 K Switching diode A1 IPAK SMPS DC/DC converter LED lighting Notebook adapter Description This dual center tap Schottky rectifier is optimized for high frequency switch mode power supplies. Packaged in TO-220AB, I2PAK and TO-220FPAB, the STPS30L120C provides Product status link adaptor designers with an optimized price-performance ratio. STPS30L120C Product summary Symbol Value I 2 x 15A F(AV) V 120 V RRM T (max.) 150 C j V (typ.) 0.65 V F DS6493 - Rev 4 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS30L120C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) Per diode 15 A I Average forward current, = 0.5 square wave F(AV) Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 828 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 150 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Value Unit Per diode 1.3 TO-220AB, IPAK Total 0.7 R Junction to case th(j-c) Per diode 4.5 TO-220FPAB C/W Total 3.8 TO-220AB, IPAK 0.1 R Coupling th(c) TO-220FPAB 3 When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) For more information, please refer to the following application note: AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 200 A j (1) I V = V Reverse leakage current R R RRM T = 125 C - 12 35 mA j T = 25 C - 0.675 j I = 5 A F T = 125 C - 0.51 0.57 j T = 25 C - 0.88 j (2) V I = 15 A Forward voltage drop V F F T = 125 C - 0.65 0.71 j T = 25 C - 1.08 j I = 30 A F T = 125 C - 0.755 0.84 j 1. Pulse test: t = 5 ms, < 2% p DS6493 - Rev 4 page 2/14