STPS30M60ST STMicroelectronics

STPS30M60S Power Schottky rectifier Features A K High current capability A Avalanche rated K K Low forward voltage drop High frequency operation A A K A Description A 2 2 D PAK I PAK The STPS30M60S is a single Schottky diode, STPS30M60SG-TR STPS30M60SR suited for high frequency switch mode power supply. K 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these A applications a good efficiency at both low and K A high load. TO-220AB STPS30M60ST Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 30 A F(AV) V 60 V RRM I V V (typ) 0.380 VForwar F I 2 x I T (max) 150 C O X j IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics October 2011 Doc ID 022049 Rev 1 1/9 www.st.com 9Characteristics STPS30M60S 1 Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 90 A F(RMS) I Average forward current, = 0.5 T = 130 C Per package 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sine-wave 600 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 34400 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 129 A 80 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 1 s, T < 150 C, I < 129 A 80 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 12 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 0.9 C/W th(j-c) Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 35 165 A Reverse leakage j (1) I V = V R R RM current T = 125 C - 25 100 mA j T = 25 C - 0.475 0.515 j I = 15 A F T = 125 C - 0.380 0.425 j (2) V Forward voltage drop V F T = 25 C - 0.540 0.590 j I = 30 A F T = 125 C - 0.470 0.535 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.395 x I + 0.0047 x I F(AV) F (RMS) 2/9 Doc ID 022049 Rev 1