STPS30L30C Low drop power Schottky rectifier Features A1 Very small conduction losses K Negligible switching losses A2 Extremely fast switching K K Low forward voltage drop Low thermal resistance A2 A2 Avalanche capability specified A1 K A1 Description 2 D PAK TO-220AB STPS30L30CG STPS30L30CT This dual center tap Schottky rectifier is suited for switch mode power supplies and high frequency DC to DC converters. 2 2 A2 Packaged in TO-220AB, D PAK and I PAK, this device is intended for use in low voltage, high A1 frequency inverters, free-wheeling and polarity K protection applications. 2 I PAK STPS30L30CR Table 1. Device summary I 2 x 15 A F(AV) (a) Figure 1. Electrical characteristics V 30 V RRM I V T (max) 150 C j Forwar I V (typ) 0.37 V F 2 x I O X I F I O X V RRM V V AR R V I R V V V V F(I ) F F(2xI ) To o oRevers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12 V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2010 Doc ID 5506 Rev 6 1/9 www.st.com 9Characteristics STPS30L30C 1 Characteristics Table 2. Absolute ratings (limiting values per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Forward rms current 30 A F(RMS) Per diode 15 I Average forward current = 0.5 T = 140 C, A F(AV) c Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal, 220 A FSM p I Peak repetitive reverse current t = 2 s square, F= 1 kHz square 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p (1) P Repetitive peak avalanche power t = 1 s T = 25 C 5300 W ARM p j Maximum repetitive peak avalanche t < 1 s T < 150 C (2) p j V 45 V ARM voltage I < 35 A AR Maximum single pulse peak t < 1 s T < 150 C (2) p j V 45 V ASM avalanche voltage I < 35 A AR T Storage temperature range -65 to + 175 C stg (3) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12 dPtot 1 --------------- -------------------------- 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a (1) Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 1.5 R Junction to case th(j-c) Total 0.8 C/W R Coupling 0.1 th(c) 1. When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1.5 mA j (1) I Reverse leakage current V = V R R RRM T = 125 C 170 350 mA j T = 25 C 0.46 j I = 15 A F T = 125 C 0.33 0.37 j (1) V Forward voltage drop V F T = 25 C 0.57 j I = 30A F T = 125 C 0.43 0.5 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.24 x I + 0.009 x I F(AV) F (RMS) 2/9 Doc ID 5506 Rev 6