STPS30H60CGY-TR STMicroelectronics

STPS30H60-Y Automotive power Schottky rectifier Datasheet production data Features High junction temperature capability A1 Avalanche rated K Low leakage current A2 Good trade-off between leakage current and forward voltage drop High frequency operation K AEC-Q 101 qualified Description A2 A1 Dual centre tab Schottky rectifier suited for high frequency switch mode power supply. 2 D PAK 2 STPS30H60CGY-TR Packaged in D PAK, this device is designed for use in automotive applications. In these applications this device provides a good margin Table 1. Device summary between the remaining voltage applied on the diode and the voltage capability of the diode. Symbol Value I 2 X 15 A F(AV) V 60 V RRM T 175 C j V 0.535 V F (typ) March 2012 Doc ID 022824 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STPS30H60-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) Per diode 15 I Average forward current, = 0.5 T = 155 C A F(AV) c Total package 30 I Surge non repetitive forward current t = 10 ms sinusoidal 230 A FSM p P Relative peak avalanche power T = 125 C t = 10 s 715 W ARM j p (1) T Operating junction temperature range -40 to + 175 C j T Storage temperature range -65 to + 175 C stg 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 1.5 R Junction to case th(j-c) Total 0.8 C/W R Coupling 0.1 th(c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 60 A j (1) I Reverse leakage current V = V R R RRM mA T = 125 C 8 25 j T = 25 C 550 j I = 7.5 A F T = 125 C 435 470 j T = 25 C 660 j (2) V Forward voltage drop I = 15 A mV F F T = 125 C 535 570 j T = 25 C 820 j I = 30 A F T = 125 C 635 690 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.45 x I + 0.008 x I F(AV) F (RMS) 2/7 Doc ID 022824 Rev 1