STPS30170DJF Datasheet 170 V, 30 A power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance High avalanche capability specified ECOPACK 2 compliant Applications Switching diode SMPS DC/DC converter Telecom power Description This Schottky rectifier is ideally suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STPS30170DJF is optimized for use in low voltage high frequency inverters, free-wheeling and polarity protection applications. Product status Its low profile was especially designed to be used in applications with space-saving constraints. STPS30170DJF PowerFLAT is a trademark of STMicroelectronics. Product summary I 30 A F(AV) V 170 V RRM T (max.) 150 C j V (typ.) 0.71 V F DS6587 - Rev 5 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS30170DJF Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values at 25 C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 170 V RRM I Forward rms current 45 A F(RMS) I Average forward current, = 0.5, square wave T = 80 C 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 200 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 900 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 150 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit R Junction to case 2.5 C/W th(j-c) For more information, please refer to the following application note : AN5046 : Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 15 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 4 12 mA j T = 25 C - 0.88 j I = 15 A F T = 125 C - 0.65 0.70 j (2) V Forward voltage drop V F T = 25 C 0.95 j I = 30 A F T = 125 C 0.71 0.79 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.65 x I + 0.0046 I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS6587 - Rev 5 page 2/9