STPS3045CP STMicroelectronics

POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 2x15A F(AV) V 45 V RRM Tj (max) 175 C 0.57 V V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING 2 D PAK n LOW THERMAL RESISTANCE STPS3045CG TO-220AB n INSULATED PACKAGE: TOP-3I STPS3045CT Insulating voltage = 2500V RMS Capacitance = 12pF DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. 2 2 Insulated 2 Packaged either in TO-220AB, D PAK, I PAK, I PAK TOP-3I TO-247, SOT93 or TOP-3I, this device is espe- STPS3045CR STPS3045CPI cially intended for use in low voltage, high fre- quency inverters, free wheeling and polarity protection applications. SOT-93 TO-247 STPS3045CP STPS3045CW August 2002 - Ed: 5E 1/9STPS3045CT/CG/CR/CP/CPI/CW ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I RMS forward current 30 A F(RMS) I Average forward current TO-220AB Tc = 155C Per diode 15 A F(AV) 2 2 = 0.5 D PAK / I PAK Per device 30 SOT-93 TO-247 TOP-3I Tc = 150C I Surge non repetitive forward current tp = 10 ms sinusoidal 220 A FSM I Repetitive peak reverse current tp = 2 s square 1A RRM F = 1kHz I Non repetitive peak reverse current 3A RSM tp = 100 s square Tstg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature * 175 C dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case Per diode 1.60 C/W th (j-c) TO-220AB 2 2 D PAK / I PAK Total 0.85 Per diode 1.5 SOT-93 TO-247 Total 0.8 Per diode 2.2 TOP-3I Total 1.6 R Coupling 0.10 th (c) TO-220AB 2 2 D PAK / I PAK SOT-93 TO-247 Coupling 1.0 TOP-3I When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode1) x R (per diode) + P (diode 2) x R th(j-c) th(c) 2/9