STPS3045DJF-TR STMicroelectronics

STPS3045DJF Datasheet 45 V, 30 A power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance High avalanche capability specified Thin package: 1 mm ECOPACK 2 compliant Applications Telecom power supply Desktop power supply Description This Schottky rectifier is ideally suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STPS3045DJF is optimized for use in low voltage high frequency inverters, free-wheeling and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving Product status link constraints. STPS3045DJF PowerFLAT is a trademark of STMicroelectronics. Product summary Symbol Value I 30 A F(AV) V 45 V RRM T (max.) 175 C j V (typ.) 0.50 V F DS6592 - Rev 5 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS3045DJF Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values at 25 C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 45 A F(RMS) I Average forward current, = 0.5, square wave T = 120 C 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 380 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 900 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit R Junction to case 2.5 C/W th(j-c) For more information, please refer to the following application note : AN5046 : Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 300 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 20 80 mA j T = 25 C - 0.56 j I = 15 A F T = 125 C - 0.41 0.46 j (1) V Forward voltage drop V F T = 25 C - 0.64 j I = 30 A F T = 125 C - 0.50 0.56 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.43 x I + 0.00433 I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS6592 - Rev 5 page 2/9