X-On Electronics has gained recognition as a prominent supplier of STPS30H60CG-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS30H60CG-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS30H60CG-TR STMicroelectronics

STPS30H60CG-TR electronic component of STMicroelectronics
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Part No.STPS30H60CG-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Power Schottky Rectifier
Datasheet: STPS30H60CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0419 ea
Line Total: USD 2.04 
Availability - 896
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
896
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0419
10 : USD 1.7666
30 : USD 1.5945
100 : USD 1.4187
500 : USD 1.3401
1000 : USD 1.3059

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS30H60CG-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS30H60CG-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS30H60C Power Schottky rectifier Features High junction temperature capability A1 Avalanche rated K Low leakage current A2 A2 K Good trade-off between leakage current and A1 forward voltage drop TO-220FPAB High frequency operation STPS30H60CFP Description Dual centre tab Schottky rectifier suited for high frequency switch mode power supply. A2 Packaged in TO-220FPAB, TO-220AB, TO-247, A2 K 2 2 K A1 I PAK, and D PAK, this device is intended to be A1 2 used in notebook and LCD adaptors and desktop TO-220AB I PAK SMPS. In these applications the STPS30H60C STPS30H60CT STPS30H60CR provides a good margin between the remaining voltages applied on the diode and the voltage capability of the diode. K A2 A1 A2 K A1 2 TO-247 D PAK STPS30H60CW STPS30H60CG Table 1. Device summary Symbol Value I 2 X 15 A F(AV) V 60 V RRM T 175 C j V 0.535 V F (typ) July 2011 Doc ID 12123 Rev 3 1/11 www.st.com 11Characteristics STPS30H60C 1 Characteristics Table 2. Absolute ratings (limiting values per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) Per diode 15 TO-220AB A T = 155 C c Total package 30 TO-220FPAB I Average forward current, = 0.5 Per diode 15 F(AV) T = 125 C c A TO-220FPAB Total package 30 T = 90 C c I Surge non repetitive forward current t = 10 ms sinusoidal 230 A FSM p P Releative peak avalanche power T = 25 C t = 1 s 10 200 W ARM j p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit 2 Per diode 1.5 TO-220AB, I PAK, 2 D PAK, TO-247 Total 0.8 R Junction to case th(j-c) Per diode 4.7 TO-220FPAB C/W Total 3.95 2 2 TO-220AB, I PAK, D PAK, TO-247 0.1 R Coupling th(c) TO-220FPAB 3.2 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 60 A j (1) I Reverse leakage current V = V R R RRM mA T = 125 C 8 25 j T = 25 C 550 j I = 7.5 A F T = 125 C 435 470 j T = 25 C 660 j (2) V Forward voltage drop I = 15 A mV F F T = 125 C 535 570 j T = 25 C 820 j I = 30 A F T = 125 C 635 690 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses use the following equation: P = 0.45 x I + 0.008 x I F(AV) F (RMS) 2/11 Doc ID 12123 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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