STPS30H100CT STMicroelectronics

STPS30H100C Datasheet 100 V power Schottky rectifier Features A1 K A2 Negligible switching losses Low leakage current Good trade off between leakage current and forward voltage drop K Avalanche rated ECOPACK 2 compliant A2 A2 K K A1 A1 Applications TO-220AB TO-247 Switching diode SMPS DC/DC converter LED lighting Description This dual Schottky rectifier is designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters. Packaged in TO-200AB and TO-247, this STPS30H100C is optimized for use in high frequency inverters. Product status link STPS30H100C Product summary I 2 x 15 A F(AV) V 100 V RRM T (max) 175 C j V (typ) 0.64 V F DS1560 - Rev 9 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS30H100C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) T = 155 C Per diode 15 C I Average forward current, = 0.5 A F(AV) T = 150 C Per device 30 C I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 778 W ARM p j T Storage temperature range -65 to +175 C stg (1) T +175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Value Unit Per diode 1.6 R Junction to case C/W th(j-c) Total 0.9 R Coupling 0.10 C/W th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) DS1560 - Rev 9 page 2/12