X-On Electronics has gained recognition as a prominent supplier of STPS3030CG-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS3030CG-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS3030CG-TR STMicroelectronics

STPS3030CG-TR electronic component of STMicroelectronics
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Part No.STPS3030CG-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2x15 Amp 30 Volt
Datasheet: STPS3030CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.6603 ea
Line Total: USD 660.3

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 2000
Multiples : 1000
2000 : USD 0.8879
3000 : USD 0.8797
4000 : USD 0.8715
5000 : USD 0.8633
6000 : USD 0.8551
10000 : USD 0.8468
20000 : USD 0.8386
25000 : USD 0.8303
50000 : USD 0.8221

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 0.8302
2000 : USD 0.7688
3000 : USD 0.7688
4000 : USD 0.7688
5000 : USD 0.7688

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 0.6965

0
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.131
10 : USD 1.1084
30 : USD 1.0952
100 : USD 1.0803

0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 4.3457
10 : USD 1.5711
100 : USD 1.2257
500 : USD 1.0062
1000 : USD 0.7934
2000 : USD 0.7689

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 15
Multiples : 1
15 : USD 1.8052
25 : USD 1.7231
100 : USD 1.3155
250 : USD 1.3023
500 : USD 1.0184

   
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We are delighted to provide the STPS3030CG-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS3030CG-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS3030/CT/CG/CR Low drop power Schottky rectifier Main product characteristics A1 I 2 x 15 A K F(AV) V 30 V RRM A2 T (max) 150 C j K V (max) 0.42 V F Features and benefits A2 Very small conduction losses A2 K Negligible switching losses A1 A1 Extremely fast switching 2 D PAK TO-220AB Low forward voltage drop for higher efficiency STPS3030CG STPS3030CT Low thermal resistance Avalanche capability specified Description Dual Schottky rectifier suited for switch mode A2 power supply and high frequency DC to DC K A1 converters. 2 I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS3030CR device is intended for use in low voltage high frequency inverters, free-wheeling and polarity j protection applications. October 2006 Rev 4 1/9 www.st.com 9Characteristics STPS3030CT/CG/CR 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward current 30 A F(RMS) T = 135 C Per diode 15 c I Average forward current A F(AV) = 0.5 Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Peak repetitive reverse current t = 2 s square F= 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 4100 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25 C) 10000 V/s R j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 2. Thermal resistance Symbol Parameter Value Unit Per diode 1.2 2 2 R Junction to case TO-220AB - D PAK - I PAK th(j-c) Total 0.8 C/W R Coupling 0.4 th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 0.23 1.0 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 125 180 j T = 25 C I = 15 A 0.44 0.49 j F T = 125 C I = 15 A 0.36 0.40 j F (1) V Forward voltage drop V F T = 25 C I = 30 A 0.53 0.58 j F T = 125 C I = 30 A 0.49 0.53 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.26 x I + 0.0107 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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