X-On Electronics has gained recognition as a prominent supplier of STPS3030CG-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS3030CG-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS3030CG-TR STMicroelectronics

STPS3030CG-TR electronic component of STMicroelectronics
STPS3030CG-TR STMicroelectronics
STPS3030CG-TR Schottky Diodes & Rectifiers
STPS3030CG-TR  Semiconductors

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See Product Specifications
Part No. STPS3030CG-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2x15 Amp 30 Volt
Datasheet: STPS3030CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.7124 ea
Line Total: USD 712.4 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2000
Multiples : 1000
2000 : USD 0.6429

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 0.7124
2000 : USD 0.6989
3000 : USD 0.6922
4000 : USD 0.6922
5000 : USD 0.6787

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 0.6536

0
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.131
10 : USD 1.1084
30 : USD 1.0953
100 : USD 1.0802

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 4.0783
10 : USD 1.4744
100 : USD 1.1503
500 : USD 0.9443
1000 : USD 0.7446
2000 : USD 0.7216

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 15
Multiples : 1
15 : USD 1.6941
25 : USD 1.6171
100 : USD 1.2345
250 : USD 1.2222
500 : USD 0.9558

   
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We are delighted to provide the STPS3030CG-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS3030CG-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS3030/CT/CG/CR Low drop power Schottky rectifier Main product characteristics A1 I 2 x 15 A K F(AV) V 30 V RRM A2 T (max) 150 C j K V (max) 0.42 V F Features and benefits A2 Very small conduction losses A2 K Negligible switching losses A1 A1 Extremely fast switching 2 D PAK TO-220AB Low forward voltage drop for higher efficiency STPS3030CG STPS3030CT Low thermal resistance Avalanche capability specified Description Dual Schottky rectifier suited for switch mode A2 power supply and high frequency DC to DC K A1 converters. 2 I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS3030CR device is intended for use in low voltage high frequency inverters, free-wheeling and polarity j protection applications. October 2006 Rev 4 1/9 www.st.com 9Characteristics STPS3030CT/CG/CR 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward current 30 A F(RMS) T = 135 C Per diode 15 c I Average forward current A F(AV) = 0.5 Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Peak repetitive reverse current t = 2 s square F= 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 4100 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25 C) 10000 V/s R j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 2. Thermal resistance Symbol Parameter Value Unit Per diode 1.2 2 2 R Junction to case TO-220AB - D PAK - I PAK th(j-c) Total 0.8 C/W R Coupling 0.4 th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 0.23 1.0 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 125 180 j T = 25 C I = 15 A 0.44 0.49 j F T = 125 C I = 15 A 0.36 0.40 j F (1) V Forward voltage drop V F T = 25 C I = 30 A 0.53 0.58 j F T = 125 C I = 30 A 0.49 0.53 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.26 x I + 0.0107 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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