STPS40M100C Power Schottky rectifier Features A1 (1) High current capability K (2) A2 (3) Avalanche rated Low forward voltage drop current High frequency operation K Description This dual diode Schottky rectifier is suited for high A2 frequency switch mode power supply. A2 2 Packaged in TO-220AB and I PAK, this device is K A1 K A1 intended to be used in notebook, game station TO220AB IPAK and desktop adaptors, providing in these STPS40M100CT STPS40M100CR applications a good efficiency at both low and high load. (a) Figure 1. Electrical characteristics Table 1. Device summary Symbol Value I V I 2 x 20 A F(AV)Forwar I V 100 V 2 x I O X RRM T (max) 150 C j I F V (typ) 0.420 V F I O X V RRM V V AR R V I R V VF(I ) VF VF(2xI ) To o oRevers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 11 V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2010 Doc ID 15522 Rev 3 1/8 www.st.com 8 Characteristics STPS40M100C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward current rms 60 A F(RMS) T = 125 C Per diode 20 c I Average forward current = 0.5 A F(AV) T = 120 C Per package 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 530 A FSM p (1) P Repetitive peak avalanche power t = 1 s T = 25 C 23 200 W ARM p j (2) V Maximum repetitive peak avalanche voltage t < 1 s T < 150 C, I < 58 A 120 V ARM p j AR (2) V Maximum single pulse peak avalanche voltage t < 1 s T < 150 C, I < 58 A 120 V ASM p j AR T Storage temperature range -65 to + 175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 11 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 1.4 R Junction to case C/W th(j-c) Total 0.95 R Coupling 0.5 C/W th(c) When diodes 1 and 2 are used simultaneously T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit T = 25 C -- 70 A j V = V R RRM T = 125 C - 15 70 mA j (1) I Reverse leakage current R T = 25 C -- 40 A j V = 70 V R T = 125 C - 7.5 40 mA j T = 125 C I = 5 A - 0.415 0.500 V j F - T = 125 C I = 10A - 0.500 0.560 j F (2) V Forward voltage drop F - T = 25 C -- 0.780 j I = 20 A F - T = 125 C - 0.585 0.640 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.560 x I + 0.004x I F(AV) F (RMS) 2/8 Doc ID 15522 Rev 3