STPS40M120C Power Schottky rectifier Datasheet production data Features A1 High current capability K Avalanche rated A2 Low forward voltage drop K K High frequency operation Description A2 A2 This Schottky diode is suited for high frequency A1 K A1 switch mode power supply. K 2 TO-220AB narrow leads I PAK Packaged in TO-220AB, TO-220AB narrow leads STPS40M120CTN STPS40M120CR 2 and I PAK, this device is intended to be used in K notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. A2 (a) Figure 1. Electrical characteristics A1 K I V TO-220ABForwar I STPS40M120CT 2 x I O X I F I Table 1. Device summary O X V RRM V V R AR Symbol Value V I R I 2 x 20 A F(AV) V V V V F(I ) F F(2xI ) To o o V 120 V RRMRevers T (max) 150 C j V (typ) 0.44 V F I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 9. V and I are AR AR pulse measurements (t < 10 s). V , I , V and p R R RRM V , are static characteristics F April 2012 Doc ID 022916 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STPS40M120C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C, unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) Per diode T = 130 C 20 c I Average forward current, = 0.5 A F(AV) Per device T = 120 C 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 1600 W ARM j p Maximum repetitive peak (2) V t < 10 s, T < 125 C, I < 10.7 A 150 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 10 s, T < 125 C, I < 10.7 A 150 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. See Figure 9 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 1.10 R Junction to case th(j-c) Total 0.80 C/W R Coupling 0.50 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/9 Doc ID 022916 Rev 1