X-On Electronics has gained recognition as a prominent supplier of STPS40M120CTN Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS40M120CTN Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS40M120CTN STMicroelectronics

STPS40M120CTN electronic component of STMicroelectronics
STPS40M120CTN STMicroelectronics
STPS40M120CTN Schottky Diodes & Rectifiers
STPS40M120CTN  Semiconductors

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Part No. STPS40M120CTN
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Diode Schottky 120V 40A 3-Pin(3+Tab) TO-220AB Tube
Datasheet: STPS40M120CTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 5.1694 ea
Line Total: USD 36.19 
Availability - 0
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 7
Multiples : 1
7 : USD 5.1694
10 : USD 4.2151

   
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We are delighted to provide the STPS40M120CTN from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS40M120CTN and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS40M120C Power Schottky rectifier Datasheet production data Features A1 High current capability K Avalanche rated A2 Low forward voltage drop K K High frequency operation Description A2 A2 This Schottky diode is suited for high frequency A1 K A1 switch mode power supply. K 2 TO-220AB narrow leads I PAK Packaged in TO-220AB, TO-220AB narrow leads STPS40M120CTN STPS40M120CR 2 and I PAK, this device is intended to be used in K notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. A2 (a) Figure 1. Electrical characteristics A1 K I V TO-220ABForwar I STPS40M120CT 2 x I O X I F I Table 1. Device summary O X V RRM V V R AR Symbol Value V I R I 2 x 20 A F(AV) V V V V F(I ) F F(2xI ) To o o V 120 V RRMRevers T (max) 150 C j V (typ) 0.44 V F I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 9. V and I are AR AR pulse measurements (t < 10 s). V , I , V and p R R RRM V , are static characteristics F April 2012 Doc ID 022916 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STPS40M120C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C, unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) Per diode T = 130 C 20 c I Average forward current, = 0.5 A F(AV) Per device T = 120 C 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 1600 W ARM j p Maximum repetitive peak (2) V t < 10 s, T < 125 C, I < 10.7 A 150 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 10 s, T < 125 C, I < 10.7 A 150 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. See Figure 9 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 1.10 R Junction to case th(j-c) Total 0.80 C/W R Coupling 0.50 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/9 Doc ID 022916 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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