STPS40M60C High efficiency 60 V power Schottky rectifier Features A1 K High current capability A2 Avalanche rated K K Low forward voltage drop Low leakage current A2 A2 High frequency operation K A1 A1 2 2 Description D PAK I PAK STPS40M60CG-TR STPS40M60CR This dual diode Schottky rectifier is suited for high K frequency switch mode power supply. 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is particularly suited for use in notebook, game station and desktop adapters, providing A2 K these applications with a good efficiency at both A1 low and high load. TO-220AB STPS40M60CT Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 2 x 20 A F(AV) I V 60 V RRM VForwar T (max) 150 C j I 2 x I O X V (typ) 385 mV F IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 13. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics May 2011 Doc ID 018813 Rev 1 1/10 www.st.com 10Characteristics STPS40M60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) T = 130 C Per diode 20 c I Average forward current, = 0.5 A F(AV) T = 120 C Per device 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 23000 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 86.3 A 80 V ARM p j AR avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 13 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.40 R Junction to case C/W th(j-c) total 0.95 R Coupling 0.50 C/W th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/10 Doc ID 018813 Rev 1