STPS40SM100CG-TR STMicroelectronics

STPS40SM100C Datasheet 100 V, 40 A power Schottky rectifier Features A1 K A2 Low forward voltage drop Good trade-off between leakage current and forward voltage drop High frequency operation Avalanche capability specified ECOPACK 2 compliant A2 K A1 Applications TO-220AB Switching diode SMPS DC/DC converter LED lighting Adapter for notebook and game station Description The STPS40SM100C is suited for high frequency switch mode power supply. Packaged in TO-220AB, the STPS40SM100C is optimized for use in notebook and game station adaptors, providing in these applications a good efficiency at both low and high load. Product status link STPS40SM100C Product summary Symbol Value I 2 x 20 A F(AV) V 100 V RRM T (max.) 150 C j V (typ.) 0.605 V F DS6173 - Rev 4 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS40SM100C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 60 A F(RMS) T = 130 C Per diode 20 C I Average forward current, = 0.5 square wave A F(AV) T = 125 C Per device 40 C I Surge non repetitive forward current t = 10 ms sinusoidal 350 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 1295 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 150 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 1.3 R Junction to case th(j-c) Total 0.7 C/W R Coupling 0.1 th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7 A j V = 70 V R T = 125 C - 7 mA j (1) I Reverse leakage current R T = 25 C - 13 45 A j V = 100 V R T = 125 C - 13 45 mA j T = 25 C - 520 j I = 5 A F T = 125 C - 435 j T = 25 C - 620 700 j (2) V Forward voltage drop I = 10 A mV F F T = 125 C - 520 580 j T = 25 C - 740 810 j I = 20 A F T = 125 C - 605 665 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p DS6173 - Rev 4 page 2/10