STPS40M80C Power Schottky rectifier Features A1 K High junction temperature capability A2 Optimized trade-off between leakage current K K and forward voltage drop Low leakage current A2 Avalanche capability specified A2 K A1 A1 Description 2 2 D PAK I PAK STPS40M80CG-TR STPS40M80CR This dual diode Schottky rectifier is suited for high frequency switch mode power supply. K 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, A2 providing these applications with a good K A1 efficiency at both low and high load. TO-220AB STPS40M80CT Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 2 x 20 A F(AV) V 80 V RRM I V T (max) 175 CForwar j I 2 x I V (typ) 475 mV O X F IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 11. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2011 Doc ID 018718 Rev 1 1/10 www.st.com 10Characteristics STPS40M80C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 80 V RRM I Forward rms current 30 A F(RMS) T = 150 C Per diode 20 c I Average forward current, = 0.5 A F(AV) T = 150 C Per device 40 c Surge non repetitive I t = 10 ms sinusoidal T = 25 C 200 A FSM p c forward current (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 10000 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 30 A 100 V ARM p j AR avalanche voltage Maximum single pulse (2) V t < 1 s, T < 150 C, I < 30 A 100 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 175 C j 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 11 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.30 R Junction to case C/W th(j-c) total 0.75 R Coupling 0.20 C/W th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/10 Doc ID 018718 Rev 1