X-On Electronics has gained recognition as a prominent supplier of STPS40L45CW Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS40L45CW Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS40L45CW STMicroelectronics

STPS40L45CW electronic component of STMicroelectronics
STPS40L45CW STMicroelectronics
STPS40L45CW Schottky Diodes & Rectifiers
STPS40L45CW  Semiconductors

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See Product Specifications
Part No. STPS40L45CW
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2X20 Amp 45 Volt
Datasheet: STPS40L45CW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
183: USD 1.417 ea
Line Total: USD 259.31 
Availability - 195
Ship by Fri. 02 May to Thu. 08 May
MOQ: 183  Multiples: 1
Pack Size: 1
Availability Price Quantity
195
Ship by Fri. 02 May to Thu. 08 May
MOQ : 183
Multiples : 1
183 : USD 1.417
300 : USD 1.391
1000 : USD 1.3

40
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 3.43
3 : USD 3.08
8 : USD 2.52
21 : USD 2.38

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Product Type
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS40L45CW from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS40L45CW and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS40L45C Low drop power Schottky rectifier Datasheet - production data Description A1 K Dual center tap Schottky barrier rectifier designed for high frequency switched mode power supplies A2 and DC to DC converters. 2 Packaged in TO-220AB, TO-247 and D PAK K these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. A2 A1 Table 1. Device summary 2 D PAK I 2 x 20 A STPS40L45CG F(AV) V 45 V RRM T (max) 150 C j V (max) 0.49 V F A2 A2 K K A1 A1 TO-220AB TO-247 STPS40L45CT STPS40L45CW Features Low forward voltage drop meaning very small conduction losses Low switching losses allowing high frequency operation Avalanche capability specified October 2013 DocID6857 Rev 5 1/11 This is information on a product in full production. www.st.comCharacteristics STPS40L45C 1 Characteristics Table 2. Absolute Ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) T =130 C Per diode 20 c I Average forward current A F(AV) 40 = 0.5 Per device I Surge non repetitive forward current t = 10 ms Sinusoidal 220 A FSM p I Repetitive peak reverse current t = 2 s square F = 1 kHz 2 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 8100 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.5 R Junction to case C/W th (j-c) Total 0.8 R Coupling 0.1 C/W th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R . j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit T = 25 C 0.6 mA j (1) I Reverse leakage current V = V R R RRM T = 125 C 140 280 mA j T = 25 C I = 20 A 0.53 j F T = 125 C I = 20 A 0.42 0.49 j F ( ) V 1. Forward voltage drop V F T = 25 C I = 40 A 0.69 j F T = 125 C I = 40 A 0.6 0.7 j F 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.28 x I + 0.0105 I F(AV) F (RMS) 2/11 DocID6857 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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