STPS3L60UY STMicroelectronics

STPS3L60U-Y Automotive power Schottky rectifier Datasheet production data Features Negligible switching losses A Low forward voltage drop Avalanche capability specified K AEC-Q101 qualified SMB Description STPS3L60UY Surface mount power Schottky rectifier suited for high frequency DC to DC converters. Packaged in SMB, this device is intended for use in low Table 1. Device summary voltage, high frequency inverters and small Symbol Value battery chargers and for applications where there are space constraints. I 3 A F(AV) V 60 V RRM T 150 C j (max) V 0.61 V F (max) March 2013 DocID024414 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STPS3L60U-Y 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I RMS forward current 10 A F(RMS) T = 105 C = 0.5 I Average forward current 3A L F(AV) I Surge non repetitive forward current t = 10 ms Sinusoidal 100 A FSM p P Repetitive peak avalanche power t = 1 s T = 25 C 2000 W p j ARM T Storage temperature range -65 to + 150 C stg (2) T Operating junction temperature range -40 to + 150 C j dV/dt Critical rate of rise reverse voltage 10000 V/s 1. limiting values, per diode dPtot 1 --------------- -------------------------- 2. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to leads 20 C/W th (j-l) Table 4. Static electrical characteristics Symbol Parameter Tests Conditions Min. Typ. Max. Unit T = 25 C - - 150 A j (1) I Reverse leakage current T = 100 C V = V - 4 15 R j R RRM mA T = 125 C - 14 30 j T = 25 C - - 0.62 j T = 100 C I = 3 A - 0.53 0.61 j F T = 125 C - 0.51 0.59 j (1) V Forward voltage drop V F T = 25 C - - 0.79 j T = 100 C I = 6 A - 0.62 0.71 j F T = 125 C - 0.6 0.69 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.44 x I + 0.05 x I F(AV) F (RMS) 2/7 DocID024414 Rev 1