STPS4030CT STMicroelectronics

STPS4030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 I 2x20A F(AV) K V 30 V RRM A2 Tj (max) 150C K V (max) 0.40 V F FEATURES AND BENEFITS A2 A2 K n VERY SMALL CONDUCTION LOSSES A1 A1 n NEGLIGIBLE SWITCHING LOSSES TO-220AB 2 D PAK n EXTREMELY FAST SWITCHING STPS4030CT STPS4030CG n LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION A2 Dual Schottky rectifier suited for switch Mode K A1 Power Supply and high frequency DC to DC 2 converters. I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS4030CR device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 32 A F(RMS) RMS forward current I 20 A F(AV) Average forward Tc = 130C Per diode 40 current = 0.5 Per device I 220 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 2A RRM Peak repetitive reverse current tp=2 s square F=1kHz P 5300 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage (rated V , Tj = 25C) R dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 2A 1/6STPS4030CT/CG/CR THERMAL RESISTANCES Symbol Parameter Value Unit 2 2 R Per diode 1.6 C/W th(j-c) Junction to case TO-220AB - D PAK-I PAK Total 0.85 R Coupling 0.1 C/W th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 0.50 1.0 mA R Reverse leakage Tj = 25C V =V R RRM 170 350 current Tj = 125C V * 0.44 0.49 V F Forward voltage drop Tj = 25CI =20A F 0.35 0.40 Tj = 125C I =20A F 0.52 0.61 Tj=25CI =40A F 0.46 0.55 Tj = 125C I =40A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.25xI + 0.0075 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature( = 0.5). P(W) IF(av)(A) 12 22 = 0.1 Rth(j-a)=Rth(j-c) = 0.2 = 0.5 = 0.05 20 10 18 16 = 1 8 14 12 6 10 8 4 Rth(j-a)=50C/W 6 T 4 2 IF(av)(A) 2 Tamb(C) =tp/T tp 0 0 0 5 10 15 20 25 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(ARMtp) PARM(1s) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6