STPS40170C Datasheet 170 V power Schottky rectifier Features A1 K A2 High junction temperature capability Low leakage current High voltage capabilities Good trade-off between leakage current and forward voltage drop Low thermal resistance A2 A2 High frequency operation K A1 K TO-220AB A1 Avalanche specification TO-247 ECOPACK 2 compliant for TO-220AB and TO-247, on demand for DPAK K Applications A2 DPAK A1 Switching diode SMPS DC/DC converter Telecom power Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in TO-247, DPAK and TO-247, the STPS40170C is optimized for use to Product status link enhance the reliability in applications. STPS40170C Product summary Symbol Value I 2 x 20 A F(AV) V 170 V RRM T 175 C j V (typ.) 0.69 V F DS4412 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS40170C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 170 V RRM I Forward rms current 60 A F(RMS) T = 150 C Per diode 20 c I Average forward current, = 0.5 square wave A F(AV) T = 145 C Per device 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 1015 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 175 C j Maximum operating junction temperature range 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 1.20 R Junction to case th(j-c) Total 0.85 C/W R Coupling 0.50 th(c) When the diodes 1 and 2 are used simultaneously : T (diode 1) = P(diode1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 30 A j (1) I V = V Reverse leakage current R R RRM T = 125 C - 7 30 mA j T = 25 C - 0.92 j I = 20 A F T = 125 C - 0.69 0.75 j (2) V Forward voltage drop V F T = 25 C - 1.00 j I = 40 A F T = 125 C - 0.79 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.64 x I + 0.0055 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS4412 - Rev 2 page 2/15