MB10H100, MF10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES 2 D PAK (TO-263AB) ITO-220AC Power pack Guardring for overvoltage protection K Low power loss, high efficiency Low forward voltage drop 2 Low leakage current 1 High forward surge capability 2 High frequency operation 1 MF10H100 MB10H100 PIN 1 PIN 1 K Meets MSL level 1, per J-STD-020, LF maximum peak of 2 245 C (for D PAK (TO-263AB) package) PIN 2 PIN 2 HEATSINK Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for ITO-220AC package) AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS I 10 A F(AV) For use in high frequency rectifier of switching mode V 100 V RRM power supplies, freewheeling diodes, DC/DC converters, or I 250 A FSM polarity protection application. V 0.64 V F MECHANICAL DATA I 4.5 A R 2 Case: ITO-220AC, D PAK (TO-263AB) T max. 175 C J 2 Molding compound meets UL 94 V-0 flammability rating Package ITO-220AC, D PAK (TO-263AB) Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified Circuit configuration Single ( X denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MB10H100 UNIT Maximum repetitive peak reverse voltage V 100 RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 DC Maximum average forward rectified current I 10 F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 250 A FSM Peak repetitive reverse current at t = 2.0 s, 1 kHz I 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 19-Sep-2018 Document Number: 87727 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MB10H100, MF10H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 10 A T = 25 C 0.77 F C I = 10 A T = 125 C 0.64 F C (1) Maximum instantaneous forward voltage V V F I = 20 A T = 25 C 0.88 F C I = 20 A T = 125 C 0.73 F C T = 25 C 4.5 A J (2) Maximum reverse current I Rated V R R T = 125 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MB MF UNIT Typical thermal resistance R 2.7 5.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) ITO-220AC MF10H100HE3 B/P 1.94 P 50/tube Tube (1) TO-263AB MB10H100HE3 B/P 1.33 P 50/tube Tube (1) TO-263AB MB10H100HE3 B/I 1.33 I 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 19-Sep-2018 Document Number: 87727 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000