SMD Schottky Barrier Rectifiers CDBA2150-HF Thru. CDBA2200-HF Reverse Voltage: 150 to 200 Volts Forward Current: 2.0 Amp RoHS Device Halogen Free DO-214AC (SMA) Features -Low Profile surface mount applications 0.067 (1.70) 0.114 (2.90) in order to optimize board space. 0.047 (1.20) 0.083 (2.10) -Low power loss, high efficiency. -High current capability, low forward voltage drop. 0.187 (4.75) -High surge capability. 0.157 (4.00) -Guard ring for overvoltage protection. -Ultra high-speed switching. 0.012 (0.30) -Silicon epitaxial planar chip,metal silicon junction. TYP. 0.098 (2.50) Mechanical data 0.067 (1.70) -Epoxy: UL94-V0 rate flame retardant. 0.008(0.20) -Case: Molded plastic, DO-214AC / SMA 0.061 (1.55) 0.003(0.08) 0.030 (0.75) -Terminals: solderable per MIL-STD-750, 0.224 (5.70) 0.185 (4.70) method 2026. -Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) -weight: 0.055 grams Maximum Ratings and Electrical Characteristics Ratings at Ta=25C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . CDBA CDBA Parameter Symbol Unit 2150-HF 2200-HF Max. repetitive peak reverse voltage VRRM 150 200 V Max. DC blocking voltage VDC 150 200 V Max. RMS voltage VRMS 105 140 V Max. instantaneous forward voltage 2.0A, TA=25C VF 0.87 0.90 V Operating Temperature TJ -50 to +175 C Symbol Parameter Conditions MIN. TYP. MAX. Unit see Fig.1 Forward rectified current IO 2.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 50 A on rate load (JEDEC method) VR =VRRM TA=25C IR 0.5 mA Reverse Current VR =VRRM TA=100C IR 20 mA Thermal Resistance Junction to ambient R JA 50 C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 30 pF Storage temperature TSTG -50 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV: D QW-JB020 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBA2150-HF Thru. CDBA2200-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 50 2.4 10 2.0 1.6 1.0 1.2 0.8 0.1 O 0.4 T=25 C J Pulse Width 300us 1% Duty Cycle 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 150 175 Ambient Temperature, (C) Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 50 700 O TJ=25 C 8.3ms single half sine wave, JEDEC method 600 40 500 30 400 300 20 200 10 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics 100 10 1.0 TJ=125 C 0.1 TJ=25 C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV: D QW-JB020 Page 2 Comchip Technology CO., LTD. Reverse Leakage Current, (mA) (A) Average Forward Current, (A) Peak Forward Surge Current, Junction Capacitance, (pF) Instantaneous Forward Current, (A)