1SS401(TE85L,F) Toshiba

1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit: mm High Speed Switching Applications z Low forward voltage : V = 0.38 V (typ.) F (3) z Low reverse current : I = 50A (max) R z Small total capacitance : C = 46 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 700 mA FM Average forward current I 300 mA O JEDEC Power dissipation P 100 mW JEITA SC-70 Junction temperature T 125 C j 1-2P1D TOSHIBA Storage temperature range T 55 to 125 C stg Weigh: 0.006 g(typ.) Operating temperature range T 40 to 100 C opr Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.16 F (1) F Forward voltage V V I = 10mA 0.22 F (2) F V I = 300mA 0.38 0.45 F (3) F Reverse current I V = 20V 50 A R R Total capacitance C V = 0, f = 1MHz 46 pF T R Pin Assignment (Top View) Marking Start of commercial production 1999-03 1 2014-03-01 1SS401 2 2014-03-01