1SS404,H3F Toshiba

1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 Unit: mm High Speed Switching Applications Two-pin small packages are suitable for higher mounting densities Low forward voltage : V = 0.38 V (typ.) F (3) Low reverse current: I = 50 A (max) R Small total capacitance: C = 46 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 700 mA FM Average forward current I 300 mA O USC Power dissipation P 200 (Note 1) mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC Operating temperature range T 40 to 100 C opr JEITA Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 1-1E1A high temperature/current/voltage and the significant change in Weight: 0.004 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy board of 20 mm 20 mm, pad dimension 4 mm 4 mm. Marking Equivalent Circuit (top view) S 5 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 1 mA 0.16 F (1) F Forward voltage V V I = 10 mA 0.22 F (2) F V I = 300 mA 0.38 0.45 F (3) F Reverse current I V = 20 V 50 A R R Total capacitance C V = 0, f = 1 MHz 46 pF T R Start of commercial production 1999-06 1 2014-03-01 1SS404 I V I V F F R R 10 m Ta = 100C 100 m Ta = 100C 1 m 75C 75C 50C 25C 100 50C 10 m 0C 25C 10 25C 1 m 0C 1 25C 100 100 n 10 10 n 0 4 8 12 24 16 20 0 0.1 0.2 0.3 0.4 0.5 Forward voltage V (V) Reverse voltage V (V) F R C V P T T R a 1000 140 f = 1 MHz Mounted on a glass epoxy Ta = 25C 120 circuit board of 20 x 20mm, 300 pad dimension 4 x 4mm. 100 100 80 30 60 10 40 3 20 0 1 0.01 1 0.03 0.3 0.1 3 10 30 100 0 25 50 75 150100 125 Reverse voltage V (V) Ambient temperature Ta (C) R 2 2014-03-01 Total capacitance C (pF) Forward current I (A) T F Power Dissipation P (mW) Reverse current I (A) R