FST16035L GeneSiC Semiconductor

FST16035L V = 35 V RRM Low V Silicon Power F I = 160 A F(AV) Schottky Diode Features High Surge Capability TO-249AB Package Isolated to Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Symbol Conditions Parameter FST16035L Unit V Maximum recurrent peak reverse voltage 35 V RRM V Maximum RMS voltage 25 V RMS VV MMaxiimum DDCC blblockiking voltltage DC 3535 VV Operating temperature T -55 to 150 C j T Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions FST16035L Unit I T = 100 C Average forward current (per pkg) 160 A F(AV) C Peak forward surge current (per leg) I t = 8.3 ms, half sine FSM p 1000 A Maximum instantaneous forward voltage (per V I = 80 A, Tj = 25 C V F FM 0.60 leg) Maximum instantaneous reverse T = 25 C 1 j current at rated DC blocking voltage I mA R T = 100 C 150 (per leg) j Thermal characteristics Maximum thermal resistance, R JC 0.50 C/W junction - case (per leg) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/FST16035L 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/