1SS412(TE85L,F) Toshiba

1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Unit: imm z Low forward voltage : V = 1.0 V (typ.) F z Low reverse current : I = 0.1 nA (typ.) R z Small total capacitance : C = 3.0 pF (typ.) T z Small package : SC-70 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10 ms) I 1 * A FSM Power dissipation P 100 mW Junction temperature T 150 C j JEDEC Storage temperature range T 55 to 150 C stg SC-70 JEITA 1-2P1C TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.006 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 0.7 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Forward voltage V I = 100 mA 1.0 1.3 V F F Reverse current I V = 80 V 0.1 10 R R nA Total capacitance C V = 0, f = 1 MHz 3.0 pF T R (between cathode and anode) Equivalent Circuit (Top View) Marking P9 Start of commercial production 2002-08 1 2014-03-01 1SS412 P Ta C 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (C) 2 2014-03-01 POWER DISSIPATION P (mW) C