1SS417CT(TPL3) Toshiba

1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm 0.60.05 Small package Low forward voltage: V = 0.56 V (typ.) F (3) Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) 0.50.03 Characteristic Symbol Rating Unit +0.02 0.050.03 0.38 -0.03 Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 100 mW CST2 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC Operating temperature range T 40 to 100 C JEITA opr TOSHIBA 1-1P1A * Mounted on a glass epoxy circuit board of 20 mm 20 mm, Weight: 0.7 mg (typ.) pad dimension of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.28 F (1) F Forward voltage V I = 10 mA 0.36 F (2) F V V I = 100 mA 0.56 0.62 F (3) F Reverse current I V = 40 V 5 A R R Total capacitance C V = 0 V, f = 1 MHz 15 pF T R Marking Equivalent Circuit (Top View) X Start of commercial production 2004-08 1 2014-03-01 CATHODE MARK 1.00.05 0.250.03 0.250.03 0.65 0.050.031SS417CT I V I IF -V VF R IR - VRR F F 100 100u 100 Ta=100C 10u 10 75 50 1u1 10 Ta=100C 25 100n 0 25 0 -25 10n 0 1 1n 0 -25 100p0 10p0 0.1 010 20 30 40 0 0.2 0.4 0.6 0.8 REVERSE VOVRLTAG (VE) VR(V) FORWORD VOLTAGE VF(V) REVERSE VOLTAGE V (V) R FORWARD VOLTAGE V (V) F P - Ta CCT - VRV T R 140 100 Mounted on a glass epoxy Ta=25C circuit board of 20 x 20mm,pad 120 f=1MHz dimension 4 x 4mm. 100 10 80 60 1 40 20 0.1 0 0 1020 3040 0 25 50 75 100 125 150 VR Ta () REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta(C) REVERSE VOLTAGE VRR(V) 2 2014-03-01 I FORWARD CURRENT F (mA) FORWARD CURRENT IF(mA) TOTAL CAPACITANCE C (pF) TOTAL CAPACITANCTCE CT(pF) MAXIMAN POWER DISSIP ATION PD(maX) REVERSE CURREIRNT (AIR() A) P (mW) REVERSE CURRENTI (A)