VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode + Available Designed and qualified according to 2 JEDEC -JESD 47 Material categorization: 2 for definitions of compliance please see 3 www.vishay.com/doc 99912 13 1 -- Anode Anode 2 TO-263AB (D PAK) APPLICATIONS Output rectification and freewheeling in inverters, choppers and converters PRODUCT SUMMARY Input rectifications where severe restrictions on 2 Package TO-263AB (D PAK) conducted EMI should be met I 20 A F(AV) DESCRIPTION V 800 V, 1000 V, 1200 V R The VS-20ETF..SPbF soft recovery rectifier series has been V at I 1.31 V F F optimized for combined short reverse recovery time and low I 355 A FSM forward voltage drop. t 95 ns rr The glass passivation ensures stable reliable operation in T max. 150 C J the most severe temperature and power cycling conditions. Diode variation Single die Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 800 to 1200 V RRM I 355 A FSM V 20 A, T = 25 C 1.31 V F J t 1 A, 100 A/s 95 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF08SPbF 800 900 VS-20ETF10SPbF 1000 1100 6 VS-20ETF12SPbF 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 300 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 635 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A s Revision: 11-Feb-16 Document Number: 94099 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 400 ns FM rr I at 20 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) Soldering temperature T 260 C S 2g Approximate weight 0.07 oz. 20ETF08S 2 Marking device Case style TO-263AB (D PAK) 20ETF10S 20ETF12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 11-Feb-16 Document Number: 94099 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000