IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE C V = 600V CES Features I = 3.7A, T = 100C Low V Non Punch Through IGBT technology CE (ON) C C Low Diode V F T = 150C G J(MAX) 10s Short Circuit Capability Square RBSOA V typ. = 1.95V E CE(ON) Ultra-soft Diode Reverse Recovery Characteristics n-channel Positive V temperature co-efficient CE (ON) Lead-free C Benefits Benchmark Efficiency for Motor Control Rugged transient performance for increased reliability E Excellent current sharing in parallel operation Low EMI G D-Pak G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGR2B60KDPbF D-Pak Tube 75 IRGR2B60KDPbF Tape and Reel 2000 IRGR2B60KDTRPbF Tape and Reel Left 3000 IRGR2B60KDTRLPbF Tape and Reel Right 3000 IRGR2B60KDTRRPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 6.3 C C I T = 100C Continuous Collector Current 3.7 C C I Pulse Collector Current, V = 15V 8.0 CM GE I Clamped Inductive Load Current, V = 20V 8.0 A LM GE I T = 25C Diode Continuous Forward Current 6.3 F C I T = 100C Diode Continuous Forward Current 3.7 F C I Diode Maximum Forward Current 8.0 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 35 W D C P T = 100C Maximum Power Dissipation 14 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Junction-to-Case (IGBT) 3.56 JC R (Diode) Junction-to-Case (Diode) 7.70 C/W JC R Junction-to-Ambient (PCB Mount) 50 JA 1 www.irf.com 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.49 V/C V = 0V, I = 1mA (25C-150C) V /T GE C (BR)CES J V Collector-to-Emitter Saturation Voltage 1.95 2.25 V I = 2.0A, V = 15V, T = 25C CE(on) C GE J 2.28 I = 2.0A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 4.0 6.0 V V = V , I = 250A GE(th) CE GE C gfe Forward Transconductance 1.2 S V = 50V, I = 2.0A, PW = 20s CE C I Collector-to-Emitter Leakage Current 0.5 25 A V = 0V, V = 600V CES GE CE 23 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.3 1.6 V I = 2.0A FM F 1.1 I = 2.0A, T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 8.0 12 I = 2.0A g C Q Gate-to-Emitter Charge (turn-on) 1.3 2.0 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 4.0 6.0 V = 400V gc CC E Turn-On Switching Loss 74 160 on E Turn-Off Switching Loss 39 120 J I = 2.0A, V = 400V, V = 15V off C CC GE E Total Switching Loss 113 280 R = 100 , L = 7.1mH, T = 25C tot G J t Turn-On delay time 11 30 Energy losses include tail & diode d(on) t Rise time 8.7 25 ns reverse recovery r t Turn-Off delay time 150 170 d(off) t Fall time 56 75 f E Turn-On Switching Loss 120 on J I = 2.0A, V =400V, V =15V E Turn-Off Switching Loss 68 off C CC GE E Total Switching Loss 188 R = 100 , L = 7.1mH, T = 150C tot G J t Turn-On delay time 13 Energy losses include tail & diode d(on) t Rise time 6.8 ns reverse recovery r t Turn-Off delay time 170 d(off) t Fall time 110 f C Input Capacitance 110 V = 0V ies GE C Output Capacitance 17 pF V = 30V CC oes C Reverse Transfer Capacitance 4.0 f = 1.0Mhz res T = 150C, I = 8.0A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 100 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 10 s T = 150C, Vp 600V, Rg=330 J V = 360V, V = +15V to 0V CC GE Erec Reverse Recovery Energy of the Diode 19 30 J T = 150C J trr Diode Reverse Recovery Time 45 68 ns V = 400V, I = 2.0A, L = 7.1mH CC F Irr Diode Peak Reverse Recovery Current 5.8 8.7 A V = 15V, Rg = 100 GE Notes: V = 80% (V ), V = 20V, L = 200H, R = 100 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J FBSOA operating conditions only. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com 2012 International Rectifier January 8, 2013