1SS423(TE85L,F) Toshiba

1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Unit: mm Small package Low forward voltage: V = 0.56 V (typ.) F (3) Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R 1.ANODE1 Maximum (peak) forward current I 200* mA FM 2.CATHODE2 Average forward current I 100* mA O 3.CATHODE1 Surge current (10 ms) I 1* A ANODE2 FSM Power dissipation P 100* mW Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA TOSHIBA 1-2S1C Operating temperature range T 40 to 100 C opr Weight: 0.0024 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.28 F (1) F Forward voltage V I = 10 mA 0.36 F (2) F V V I = 100 mA 0.56 0.62 F (3) F Reverse current I V = 40 V 5 R R A Total capacitance C V = 0, f = 1 MHz 15 T R pF (between cathode and anode) Marking W9 Start of commercial production 2004-07 1 2014-03-01 1SS423 IF - VF IR VR 100u 100 100 Ta=100C 10u 10 75 50 1u1 10 Ta = 100C 25 100n 0 25 -25 0 10n 0 1 1n 0 -25 0 100p 0.1 0 10p 0 0.2 0.4 0.6 0.8 010 20 30 40 REVERSE VOLTAGE VR (V) FORWORD VOLTAGE VF (V) CT - VR 100 Ta = 25C f = 1MHz 10 1 0.1 0 10203040 REVERSE VOLTAGE VR (V) 2 2014-03-01 FORWARD CURRENT IF (mA) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A)