1SS424(TPL3,F) Toshiba

1SS424 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications Unit: mm z Low forward voltage : V = 0.50 V (typ.) F (3) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 30 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 300 mA FM Average forward current I 200 mA O Surge current (10 ms) I 1 A FSM Power dissipation P * 150 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1G1A temperature/current/voltage and the significant change in Weight: 1.4 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass-epoxy circuit board of 20 20 mm, pad dimensions of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.18 F (1) F Forward voltage V I = 5 mA 0.23 F (2) F V V I = 200 mA 0.42 0.5 F (3) F Reverse current I V = 10 V 30 R (1) R A I V = 20 V 50 R (2) R Total capacitance C V = 0, f = 1 MHz 20 T R pF Equivalent Circuit (Top View) Marking S8 Start of commercial production 2004-08 2014-03-01 11SS424 IF - VF IR - VR 1 1000 1000010m Ta=100C Ta=100C 100m 1m 100 1000 25 100 100 10 10m 25 10u 10 1 1m -25 1 1u 0 -25 100u 0 100n 0 10u 0 10n 0 1u 0 1n 0 0.2 0.4 0.6 0 5 10 15 20 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) P Ta CT - VR 200 100 Mounted on a glass-epoxy circuit board of 20 20 mm, 150 pad dimensions of 4 4 mm. 10 100 50 1 0 010 20 30 0 25 50 75 100 125 150 175 REVERSE VOLTAGE VF (V) AMBIENT TEMPERATURE Ta (C) 2014-03-01 2 FORWARD CURRENT IF (A) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A) COLLECTOR POWER DISSIPATION P (mW) C