1SS403,H3F(T Toshiba

1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit: mm High Voltage Switching Applications AEC-Q101 Qualified (Note1) Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (max) Small total capacitance : CT = 1.5pF (typ.) Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 250 V RM Reverse voltage V 200 V R Maximum (peak) forward current I 300 mA FM JEDEC Average forward current I 100 mA O JEITA Surge current (10ms) I 2 A FSM TOSHIBA 1-1E1A Power dissipation P 200 * mW Weight: 0.0045g (typ.) Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: When mounted on a glass epoxy board PCB: 20 mm 20 mm, with copper pad 4 mm 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 10mA 0.72 1.0 F (1) F Forward voltage V V I = 100mA 0.90 1.2 F (2) F I V = 50V 0.1 R (1) R Reverse current A I V = 200V 1.0 R (2) R Total capacitance C V = 0, f = 1MHz 1.5 3.0 pF T R Reverse recovery time t I = 10mA (Fig. 1) 10 60 ns rr F Start of commercial production 1998-10 1 2015-01-09 1SS403 Fig.1 Reverse Recovery Time Test Circuit (trr) Equivalent Circuit (Top View) Marking 2 2015-01-09