MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES UL recognition, file number E54214 ~ Ideal for printed circuit boards ~ Applicable for automative insertion High surge current capability Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication ~ applications. MECHANICAL DATA Case Style MBM Case: MBM PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating Package MBM Base P/N-E3 - RoHS-compliant, commercial grade I 0.5 A F(AV) Terminals: Matte tin plated leads, solderable per V 200 V, 400 V, 600 V J-STD-002 and JESD 22-B102 RRM E3 suffix meets JESD 201 class 1A whisker test I 35 A FSM I 5 A Polarity: As marked on body R V at I = 0.4 A 1.0 V F F T max. 150 C J Diode variations Quad MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MB2M MB4M MB6M UNIT Device marking code 2 4 6 Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum RMS voltage V 140 280 420 V RMS Maximum DC blocking voltage V 200 400 600 V DC (1) on glass-epoxy PCB 0.5 Maximum average forward output I A F(AV) (2) rectified current (fig. 1) on aluminum substrate 0.8 Peak forward surge current 8.3 ms single half sine-wave I 35 A FSM superimposed on rated load 2 2 Rating for fusing (t < 8.3 ms) It5.0 A s Operating junction and storage temperature range T , T - 55 to + 150 C J STG Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad Revision: 16-Aug-13 Document Number: 88660 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT Maximum instantaneous forward I = 0.4 A V 1.0 V F F voltage per diode T = 25 C 5.0 Maximum DC reverse current at rated DC blocking A I A R voltage per diode T = 125 C 100 A Typical junction capacitance per diode 4.0 V, 1 MHz C 13 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MB2M MB4M MB6M UNIT (1) R 85 JA (2) Typical thermal resistance R 70 C/W JA (1) R 20 JL Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MB2M-E3/45 0.22 45 100 Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 0.8 35 T = 40 C A Aluminum Substrate Single Half Sine-Wave 0.7 30 0.6 25 0.5 20 f = 50 Hz f = 60 Hz Glass 0.4 Epoxy 15 PCB 0.3 10 0.2 5 0.1 Resistive or Inductive Load 1.0 Cycle 0 0 0 20 40 100 120 140 160 1 10 100 60 80 Ambient Temperature (C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 16-Aug-13 Document Number: 88660 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Peak Forward Surge Current (A)