B320AF/B330AF Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits Reduced Low Forward Voltage Drop (V ) Better Efficiency and F B320AF/B330AF Cooler Operation V (V) I (mA) F(MAX) R(MAX) Product V (V) I (A) Reduced High-temperature Reverse Leakage Increased RRM O +25C +25C Reliability against Thermal Runaway Failure in High B320AF 20 3 0.50 0.20 Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) B330AF 30 3 0.50 0.20 Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SMAF The Schottky providing low V and excellent reverse leakage stability F Case Material: Molded Plastic, Green Molding Compound. UL at high temperatures, this device is ideal for use in general Flammability Classification Rating 94V-0 rectification applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Boost Diodes Solderable per MIL-STD-202, Method 208 Blocking Diodes Polarity: Cathode Band Recirculating Diodes Weight: 0.036 grams (Approximate) SMAF Top View Ordering Information (Note 4) Part Number Case Packaging B320AF-13 SMAF 10,000/Tape & Reel B330AF-13 SMAF 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B320AF/B330AF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol B320AF B330AF Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 20 30 V VRWM DC Blocking Voltage V RM Average Rectified Output Current I 3 A O Non-Repetitive Peak Forward Surge Current 8.3ms 80 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 85 C/W JA Typical Thermal Resistance Junction to Case (Note 5) R 45 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.46 0.50 I = 3A, T = +25C F J Forward Voltage Drop V V F 0.40 I = 3A, T = +125C F J V = 20V, T = +25C R J B320AF 0.02 0.20 Leakage Current (Note 6) 12 V = 20V, T = +125C R J I mA R B330AF 0.03 0.20 V = 30V, T = +25C R J 14.0 V = 30V, T = +125C R J Typical Capacitance 140 pF CT VR = 4.0V, f = 1MHz Notes: 5. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 B320AF/B330AF May 2017 Diodes Incorporated www.diodes.com Document number: DS39623 Rev. 2 - 2 NEW PRODUCT