STPS3L45AF STMicroelectronics

STPS3L45AF Power Schottky rectifier Datasheet - production data Description Schottky rectifier suited for switched mode power supplies and high frequency DC to DC converters. Packaged in a tiny SMAflat package, A this device has been optimized for use in compact chargers. (a) K Figure 1. Electrical characteristics I SMAflat (non exposed pad) VForwar STPS3L45AF I 2 x I O X I F I O X V RRM V V R AR V Features I R V V V V F(I ) F F(2xI ) To o o Negligible switching lossesRevers Low thermal resistance Low forward voltage drop I AR Avalanche capability specified Table 1. Device summary Symbol value I 3 A F(AV) V 45 V RRM T (max) 150 C j V (typ) 0.462 V F a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 11. V and I are AR AR pulse measurements (t < 10 s). V , I , V and p R R RRM V , are static characteristics F February 2014 DocID024949 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPS3L45AF 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Test conditions Value Unit V Repetitive peak reverse voltage 45 V RRM I Average forward current T = 120 C = 0.5 3 A F(AV) L Surge non repetitive forward I t = 10 ms sinusoidal 75 A FSM p current (1) P Repetitive peak avalanche power t = 10 s Tj = 125 C 70 W ARM p Maximum repetitive peak (2) V t < 10 s, Tj < 125 C, I < 1.4 A 50 V ARM p AR avalanche voltage Maximum single pulse peak (2) V t < 10 s, Tj < 125 C, I < 1.4 A 50 V ASM p AR avalanche voltage T Storage temperature range -65 to + 175 C stg (3) T Operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. Refer to Figure 11 dPtot 1 --------------- -------------------------- 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value Unit R Thermal resistance junction to lead 15 C/W th(j-l) Table 4. Static electrical characteristics Symbol Parameter Test conditions Typ. Max. Unit T = 25 C 80 300 A j (1) I Reverse leakage current V = V R R RRM T = 125 C 66 135 mA j T = 25 C 0.462 0.57 j (1) V Forward voltage drop I = 3 A V F F T = 125 C 0.41 0.51 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.36 x I + 0.05 I F(AV) F (RMS) 2/8 DocID024949 Rev 2