Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A CD214A- Parameter Symbol Unit B120R B120LR B140R B140LR B160R B1100R Maximum Repetitive Peak Reverse Voltage V 20 20 40 40 60 100 V RRM Maximum Average Forward Current I 1 A F(AV) Maximum Peak Forward Surge Current I 30 A FSM (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range T -55 to +125 -55 to +150 C OPR Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Condition or Model Min. Typ. Max. Unit CD214A-B120LR 0.37 0.38 CD214A-B140LR CD214A-B120R Maximum Instantaneous Forward Voltage 0.47 0.50 V V F (NOTE 1) CD214A-B140R 1 A CD214A-B160R 0.60 0.70 CD214A-B1100R 0.76 0.85 CD214A-B120LR 0.35 1.0 mA CD214A-B140LR V = CD214A-B120R R DC Reverse Current I R V CD214A-B140R RRM 0.02 0.2 mA CD214A-B160R CD214A-B1100R Typical Junction Capacitance C V = 4 V, f = 1.0 MHz 110 pF J R CD214A-B120R CD214A-B140R 88 CD214A-B160R Junction to R JA CD214A-B1100R Ambient CD214A-B120LR 55 CD214A-B140LR Typical Thermal Resistance C/W (NOTE 2) CD214A-B120R CD214A-B140R 28 CD214A-B160R Junction to R JL CD214A-B1100R Lead CD214A-B120LR 17 CD214A-B140LR NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* CD214A-B1xR3312 - 2 Series mm SchottkySMD Trimming Barrier Rectifier Potentiometer Chip Diode Performance Graphs Forward Current Derating Curve Maximum Peak Forward Surge Current 1.0 30 1.0 30 8.3 ms 1.0 30 8.3 ms Single Half 25 CD214A-B120R, -B140R, Single Half 25 8.3 ms CD214A-B120R, -B140R, Sine-Wave CD214A-B120LR, -B140LR Sine-Wave Single Half CD214A-B120LR, -B140LR 25 CD214A-B120R, -B140R, (JEDEC Method) 20 Sine-Wave (JEDEC Method) CD214A-B120LR, -B140LR 20 CD214A-B160R, -B1100R CD214A-B160R, -B1100R (JEDEC Method) 20 CD214A-B160R, -B1100R 15 15 0.5 0.5 15 Resistive or 10 0.5 Resistive or 10 CD214A-B120LR, -B140LR Inductive Load CD214A-B120LR, -B140LR Inductive Load Resistive or 10 PCB Mounted on CD214A-B120LR, -B140LR 5 CD214A-B120R, -B140R Inductive Load PCB Mounted on 5 CD214A-B120R, -B140R 5.0 x 5.0 mm CD214A-B160R, -B1100R 5.0 x 5.0 mm CD214A-B160R, -B1100R PCB Mounted on 5 (0.2 x 0.2 inch) CD214A-B120R, -B140R (0.2 x 0.2 inch) 0 5.0 x 5.0 mm CD214A-B160R, -B1100R Copper Pad Areas 0 Copper Pad Areas 010 100 (0.2 x 0.2 inch) 010 100 0 0 Copper Pad Areas Number of Cycles 60 Hz 0 010 100 Number of Cycles 60 Hz 02550 75 100 125 150 02550 75 100 125 150 0 Number of Cycles 60 Hz 0255Lead Temperature (C)0 75 100 125 150 Lead Temperature (C) Lead Temperature (C) Typical Instantaneous Forward Characteristics Typical Reverse Characteristics 10 100 10 100 CD214A-B120LR, -B140LR CD214A-B120LR, -B140LR 10 100 CD214A-B120R, -B140R, T = 100 C J T = 100 C CD214A-B120R, -B140R, CD214A-B120LR, -B140LR J -B160R, -B1100R -B160R, -B1100R CD214A-B120R, -B140R, T = 100 C J 10 10 -B160R, -B1100R 1 10 1 1 1 1 T = 100 C J T = 100 C J 1 T = 100 C J T = 25 C J T = 25 C 0.10 J 0.10 0.1 0.1 T = 25 C J 0.10 0.1 0.01 0.01 0.01 0.01 T = 25 C 0.01 CD214A-B120LR, -B140LR J T = 25 C CD214A-B120LR, -B140LR J 0.01 CD214A-B120R, -B140R T = 25 C CD214A-B120R, -B140R CD214A-B120LR, -B140LR J CD214A-B160R 0.001 CD214A-B160R 0.001 CD214A-B120R, -B140R CD214A-B1100R 020 40 60 80 100 CD214A-B1100R 020 40 60 80 100 CD214A-B160R 0.001 0.001 CD214A-B1100R 02Percent of Rated Peak Reverse Voltage (%)0 40 60 80 100 0.001 Percent of Rated Peak Reverse Voltage (%) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.001 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (Volts) Instantaneous Forward Voltage (Volts) Typical Junction Capacitance 400 400 400 T = 25 C J T = 25 C J f = 1.0 MHz f = 1.0 MHz T = 25 C V = 50 mVP-PJ sig V = 50 mVP-P sig f = 1.0 MHz V = 50 mVP-P 100 sig 100 100 Specifications are subject to change without notice. CD214A-B1xL SERIES The device characteristics and parameters in this data sheet can and do vary in different CD214A-B1xL SERIES applications and actual device performance may vary over time. 10 CD214A-B1xL SERIES 10 Users should verify actual device performance in their specific applications. 0.1 1.0 10 100 0.1 1.0 10 100 10 Reverse Voltage (Volts) 0.1 1.0 10 100 Reverse Voltage (Volts) Reverse Voltage (Volts) Instantaneous Forward Current (A) Instantaneous Forward Current (A) Instantaneous Forward Current (A) Junction Capacitance (pF) Average Forward Rectified Current (Amps) Junction Capacitance (pF) Average Forward Rectified Current (Amps) Average Forward Rectified Current (Amps) Junction Capacitance (pF) Instantaneous Reverse Current (mA) Instantaneous Reverse Current (mA) Peak Forward Surge Current (Amps)Peak Forward Surge Current (Amps) Instantaneous Reverse Current (mA) Peak Forward Surge Current (Amps)