BYS11-90-M3/TR Vishay

33 3 BYS11-90-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Very low switching losses High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak SMA (DO-214AC) of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE TYPICAL APPLICATIONS For use in high frequency inverters, switching power 3D Models supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.5 A F(AV) Case: SMA (DO-214AC) V 90 V RRM Molding compound meets UL 94 V-0 flammability rating I 40 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and V 0.75 V F commercial grade T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMA (DO-214AC) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLBYS11-90UNIT Device marking code BYS109 Maximum repetitive peak reverse voltage V 90 V RRM Maximum average forward rectified current I 1.5 A F(AV) 8.3 ms 40 Peak forward surge current single half sine-wave I A FSM superimposed on rated load 10 ms 30 Voltage rate of change (rated V ) dV/dt 10 000 V/s R Junction and storage temperature range T , T -55 to +150 C J STG Reivision: 09-May-2019 Document Number: 89409 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D BYS11-90-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYS11-90 UNIT (1) Maximum instantaneous forward voltage 1.0 A V 750 mV F T = 25 C 100 A J (1) Maximum DC reverse current V I RRM R T = 100 C 1 mA J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYS11-90 UNIT Maximum thermal resistance, junction to lead R 25 C/W JL (1) R 150 JA (2) Maximum thermal resistance, junction to ambient R 125 C/W JA (3) R 100 JA Notes (1) Mounted on epoxy-glass hard tissue (2) 2 Mounted on epoxy-glass hard tissue, 50 mm 35 m Cu (3) 2 Mounted on Al-oxide-ceramic (Al O ), 50 mm 35 m Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS11-90-M3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYS11-90-M3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 10 2.0 V = V , Half Sine-Wave, R = 25 K/W R RRM thJL T = 150 C J 1.6 1 1.2 0.1 T = 25 C 0.8 J 0.01 0.4 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 40 80 120 160 200 Forward Voltage (V) Ambient Temperature (C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Reivision: 09-May-2019 Document Number: 89409 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Forward Current (A) Average Forward Current (A)