333 3 BYS12-90 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES Available Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Very low switching losses High surge capability SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Cathode Anode AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS I 1.5 A F(AV) MECHANICAL DATA V 90 V RRM Case: SMA (DO-214AC) I 40 A FSM Molding compound meets UL 94 V-0 flammability rating V at I = 1.0 A 0.75 V F F Base P/N-E3 - RoHS-compliant, commercial grad e T max. 150 C J Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified Package SMA (DO-214AC) ( X denotes revision code e.g. A, B,.....) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and HE3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYS12-90 UNIT Device marking code BYS 209 Maximum repetitive peak reverse voltage V 90 V RRM Maximum average forward rectified current I 1.5 A F(AV) 8.3 ms 40 Peak forward surge current single half sine-wave I A FSM superimposed on rated load 10 ms 30 Voltage rate of change (rated V ) dV/dt 10 000 V/s R Junction and storage temperature range T , T -55 to +150 C J STG Revision: 13-May-2020 Document Number: 88950 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BYS12-90 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYS12-90 UNIT I = 1.0 A 750 F (1) Maximum instantaneous forward voltage T = 25 C V mV J F I = 15 mA 360 F T = 25 C 100 A J (1) Maximum DC reverse current V I RRM R T = 100 C 1 mA J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYS12-90 UNIT Maximum thermal resistance, junction to lead R 25 C/W JL (1) R 150 JA (2) Maximum thermal resistance, junction to ambient R 125 C/W JA (3) R 100 JA Notes (1) Mounted on epoxy-glass hard tissue (2) 2 Mounted on epoxy-glass hard tissue, 50 mm 35 m Cu (3) 2 Mounted on Al-oxide-ceramic (Al O ), 50 mm 35 m Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS12-90-E3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYS12-90-E3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYS12-90HE3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) BYS12-90HE3 A/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 13-May-2020 Document Number: 88950 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000