HN2S01FUTE85LF Toshiba

HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: V = 0.23V (typ.) I = 5mA F F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 200 * mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC Operating temperature range T 40 to 100 C opr JEITA TOSHIBA 1-2T1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 6.2mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 F (2) F V V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0, f = 1MH 20 40 T R z pF Start of commercial production 1995-09 1 2014-03-01 HN2S01FU Pin Assignment (Top View) Marking 2 2014-03-01