HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit: mm z High voltage : V = 120V CEO z High h : h = 200 to 700 FE FE Excez llent h linearity FE : h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C z Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO 1.EMITTER1 (E1) 2.BASE (B) Collector current I 100 mA C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) Base current I 20 mA B 5.COLLECTOR1 (C1) Collector power dissipation P* 300 mW C Junction temperature T 150 C j JEDEC Storage temperature range T 55 to 150 C stg JEITA TOSHIBA 2-3L1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.014g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 120V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h V = 6V, I = 2mA 200 700 FE CE C Collector-emitter saturation voltage V I = 10mA, I = 1mA 0.3 V CE C B Transition frequency f V = 6V, I = 1mA 100 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 3.0 pF ob CB E V = 6 V, I = 0.1 mA CE C Noise figure NF 1.0 dB f = 1 kHz, R = 10 k G Marking Equivalent Circuit (Top View) 4 5 Q1 Q2 33 Start of commercial production 2000-08 1 23 1 2014-03-01 HN4C51J (Q1,Q2 Common) 2 2014-03-01