X-On Electronics has gained recognition as a prominent supplier of HN4A51JTE85LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. HN4A51JTE85LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

HN4A51JTE85LF Toshiba

HN4A51JTE85LF electronic component of Toshiba
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Part No.HN4A51JTE85LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Trans LFreq -120V PNP PNP -0.1A
Datasheet: HN4A51JTE85LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3309 ea
Line Total: USD 1.65 
Availability - 72
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
72
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3309
50 : USD 0.2678
150 : USD 0.2407
500 : USD 0.207
3000 : USD 0.192
6000 : USD 0.183

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HN4A51JTE85LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HN4A51JTE85LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A51J Audio Frequency General Purpose Amplifier Applications Unit: mm z High voltage : V = 120V CEO z High h : h = 200 to 700 FE FE z Excellent h linearity FE : h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C z Low noise: NF = 1dB (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V 1.EMITTER1 (E1) EBO 2.BASE (B) Collector current I 100 mA C 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) Base current I 20 mA B 5.COLLECTOR1 (C1) Collector power dissipation P * 300 mW C Junction temperature T 150 C j JEDEC JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-3L1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.014g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 120V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h V = 6V, I = 2mA 200 700 FE CE C Collector-emitter saturation voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B Transition frequency f V = 6V, I = 1mA 100 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 4 pF ob CB E V = 6 V, I = 0.1 mA CE C Noise figure NF 1.0 dB f = 1 kHz, R = 10 k G Marking Equivalent Circuit (Top View) 4 5 Q2 Q1 34 Start of commercial production 2000-08 1 23 1 2014-03-01 HN4A51J Q1,Q2 Common 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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