HN2S02JE(TE85L,F) Toshiba

HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: V = 0.54V (typ.) F (3) z Low reverse current: I = 5A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O 1.ANODE1 2.NC Surge current (10ms) I 1 * A FSM 3.ANODE2 4.CATHODE2 Power dissipation P 100 ** mW 5.CATHODE1 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-2W1B temperature/current/voltage and the significant change in Weight: 0.003g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating (Total rating = unit rating 1.5) ** :Total rating Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MHz 18 pF T R Pin Assignment (Top View) Marking 5 4 A9 Q1 Q2 Start of commercial production 1 2 3 2002-06 1 2014-03-01 HN2S02JE P* Ta *:Total Rating 2 2014-03-01