CUHS10F60 Schottky Barrier Diode Silicon Epitaxial CUHS10F60CUHS10F60CUHS10F60CUHS10F60 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode US2H 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Reverse voltage V 60 V R Average rectified current I (Note 1) 1.0 A O Non-repetitive peak forward surge current I (Note 2) 10 A FSM Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Pulse width 10 ms Start of commercial production 2018-04 2018-2019 2019-09-25 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0CUHS10F60 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Forward voltage V (1) (Note 1) I = 100 mA 0.36 0.41 V F F V (2) I = 500 mA 0.46 0.51 F F V (3) I = 1 A 0.56 0.62 F F Reverse current I (1) (Note 1) V = 10 V 0.7 A R R I (2) V = 60 V 6.0 40 R R Total capacitance C V = 0 V, f = 1 MHz 130 pF t R Note 1: Pulse measurement. 5. 5. MarkingMarking 5. 5. MarkingMarking Fig. Fig. Fig. Fig. 5.15.15.15.1 MarkingMarkingMarkingMarking Marking Code Part Number 9G CUHS10F60 6. 6. 6. 6. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 7. 7. 7. 7. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) Fig. Fig. Fig. Fig. 7.17.17.17.1 Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm)Land Pattern Dimensions for Reference Only (Unit: mm) 2018-2019 2019-09-25 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0