CUS02 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS02 Switching Mode Power Supply Applications Unit: mm + 0.2 Portable Equipment Battery Applications 1.25 0.1 + 0.05 0.13 0.88 0.1 0.03 Peak forward voltage: V = 0.45 V I = 0.7 A FM F Average forward current: I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for high-density board assembly due to the use of a small TM surface-mount package, USFLAT Absolute Maximum Ratings (Ta = 25C) 0.6 0.1 Characteristics Symbol Rating Unit 0.88 0.1 Repetitive peak reverse voltage V 30 V RRM 0.6 0.1 Average forward current I A F (AV) 1.0 (Note 1) Peak one cycle surge forward current I 20 (50 Hz) A FSM (non-repetitive) Junction temperature T 40 to 150 C j 0.78 0.1 ANODE Storage temperature range T 40 to 150 C stg CATHODE 0.6 0.1 Note 1: Ta = 25C: Device mounted on a glass-epoxy board Board size: 50 mm 50 mm, Land size: 6 mm 6 mm JEDEC Rectangular waveform ( = 180), V = 15 V R JEITA Note 2: Using continuously under heavy loads (e.g. the application of TOSHIBA 3-2B1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.004 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A 0.35 FM (1) FM Peak forward voltage V I = 0.7 A 0.42 0.45 V FM (2) FM V I = 1.0 A 0.47 FM (3) FM I V = 5 V 0.7 RRM (1) RRM Repetitive peak reverse current A I V = 30 V 10 100 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 40 pF j R Device mounted on a ceramic board (Board size: 50 mm 50 mm , 75 Land size: 2 mm 2 mm) Thermal resistance R C/W th (j-a) Device mounted on a glass-epoxy (junction to ambient) board 150 (Board size: 50 mm 50 mm , Land size: 6 mm 6 mm) Thermal resistance (junction to lead) R Junction to lead of cathode side 30 C/W th (j-) Start of commercial production 2001-12 1 2015-07-16 2.5 0.2 0.6 0.1 1.9 0.1 0 ~ 0.05 0.5 0.1 1.4 0.2 CUS02 Marking Abbreviation Code Part No. 2 CUS02 Land pattern dimensions for reference only Unit: mm 2.0 0.5 0.8 1.1 0.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. V : Use this rating with reference to the 1). V has a temperature coefficient of 0.1%/C. Take this RRM RRM temperature coefficient into account designing a device at low temperature. I : The worst-case current is no greater than 80% of the absolute maximum rating of I and T be F(AV) F(AV) j below 120C. When using this device, take the margin into consideration by using an allowable Ta max-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. The device is used at T j j below 120C. 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) Refer to the Rectifiers databook for further information. 2 2015-07-16