CUS01(T5L,TEM,Q) Toshiba

CUS01 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS01 Portable Equipment Battery Applications Unit: mm + 0.2 1.25 Forward voltage: V = 0.37 V (max) I = 0.7 A FM F 0.1 + 0.05 0.13 0.88 0.1 0.03 Average forward current: I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 30 V RRM Suitable for high-density board assembly due to the use of a small TM Surface-mount package, USFLAT Absolute Maximum Ratings (Ta = 25C) 0.6 0.1 Characteristics Symbol Rating Unit 0.88 0.1 Repetitive peak reverse voltage V 30 V RRM 0.6 0.1 1.0 Average forward current I A F (AV) (Note 1) Peak one cycle surge forward current I 20 (50 Hz) A FSM 0.78 0.1 (Non-repetitive) ANODE CATHODE Junction temperature T 40 to 125 C j 0.6 0.1 Storage temperature range T 40 to 150 C stg Note 1: T = 86C: Rectangular waveform ( = 180), V = 15 V R JEDEC Note 2: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 3-2B1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.004 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A 0.25 FM (1) FM Peak forward voltage V V I = 0.7 A 0.33 0.37 FM (2) FM V I = 1.0 A 0.39 FM (3) FM I V = 5 V 50 A RRM (1) RRM Repetitive peak reverse current I V = 30 V 0.5 1.5 mA RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 40 pF j R Device mounted on a ceramic board 75 (soldering land: 2 mm 2 mm) Thermal resistance R C/W th (j-a) Device mounted on a glass-epoxy (junction to ambient) board 150 (soldering land: 6 mm 6 mm) Thermal resistance (junction to lead) R Junction to lead of cathode side 30 C/W th (j- ) 1 2008-05-13 2.5 0.2 0.6 0.1 1.9 0.1 0 ~ 0.05 0.5 0.1 1.4 0.2 CUS01 Marking Abbreviation Code Part No. 1 CUS01 Standard Soldering Pad Unit: mm 0.8 2.0 0.5 1.1 0.8 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is V -I trade-off type, lower V higher I therefore, thermal runaway might occur when F RRM F RRM voltage is applied. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst-case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 100C. When using this device, take the margin into consideration by F(AV) j using an allowable Ta max-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at T below 100C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. Refer to the Rectifiers databook for further information. 2 2008-05-13